Regular Paper

[OPTICAL REVIEW Vol. 4, No. 1A (1997) 69-71]

InGaAsP Multiple Quantum Well Edge-Emitting Light-Emitting Diode Showing Low Coherence Characteristics Using Selective-Area Metalorganic Vapor Phase Epitaxy

Yasumasa KASHIMA, Tsutomu MUNAKATA and Akio MATOBA

Optical Device Division, Oki Electric Industry Co., Ltd., Higashiasakawa, Hachioji, Tokyo, 193 Japan

(Received June 26, 1996; Accepted September 11, 1996)

Low coherence multiple-quantum well edge-emitting light-emitting diodes were obtained using selective-area metalorganic vapor-phase epitaxial growth, which utilized growth rate enhancement on an open stripe region between mask stripes. An optical absorption region, which was controlled by selective-area growth, was introduced to suppress optical feedback. At a driving current of 100 mA and an ambient temperature of 25°C, a power of 55 μW was coupled into a single-mode fiber, and a broad spectrum without spectral ripple was observed. Low coherence characteristics and very small temperature dependence were obtained in the temperature range from -40°C to 85°C. The modulation bandwidth was 210 MHz at a bias current of 100 mA.

Key words: InGaAsP edge-emitting LED, selective-area growth, MOVPE, multiple quantum well, low coherence

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