Letter

[OPTICAL REVIEW Vol. 5, No. 2 (1998) 69-71]

Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaInNAs/GaAs Single Quantum Well Laser Diode

Takeshi KITATANI,¹ Masahiko KONDOW,¹ Koji NAKAHARA,¹ M. C. LARSON^2,* and Kazuhisa UOMI²

¹RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, ²Central Research Laboratory, Hitachi, Ltd. 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

(Received February 25, 1998; Accepted March 4, 1998)

Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.

Key words: semiconductor junction lasers, quantum well

tkitata@crl.hitachi.co.jp

OPTICAL REVIEW HomePage

© 1994-2011 The Optical Society of Japan (An Affiliate of the Japan Society of Applied Physics)
Produced, Developed, and Maintained by The Optical Society of Japan (An Affiliate of the Japan Society of Applied Physics)
Printed in Japan by Daishowa Printing Co., Ltd.

mail to Editorial Office, OPTICAL REVIEW