シリサイド系半導体と関連物質研究会


■The Japan Society of Applied Physics and Related Societies, The 52th Spring Meeting, Saitama University, Saitama, Japan, March 29- April 1, 2005.

Date: March 31
Time: 13:00 - 18:00
Presentation: 17 oral presentations
Topic: PL, EL, Fabrication of thin films and bulk srystals，interface characterization, BaSi2 and other silicides.

Invited speaker (13:00-13:30)
Dr. Yutaka YOSHIDA, Shizuoka Institute of Science and Technology
"In-situ observation of the formation process of FeSi2 by Mossbauer Spectroscopy"

Date: April 1
Time: 9:00 - 14:15
Presentation: 18 oral presentations
Topic: Growth methods of beta-FeSi2, Fe3Si, and ferromagnetic dots.


■The Japan Society of Applied Physics, The 65th Autumn Meeting, Tohoku Gakuin University, Miyagi, Japan, September 1- 4, 2004.　

Date: September 1
Time: 13:15 - 17:00
Presentation: 28 poster presentations
Topic: PL, EL, Fabrication of thin films and bulk srystals，interface characterization, BaSi2 and other silicides.

■The Japan Society of Applied Physics and Related Societies, The 51th Spring Meeting, Tokyou University of Technology, Tokyo, Japan, March 28- 31, 2004.
　
"4th symposium of semiconducting silicides" was held.
Date: March 29
Time: 13:15 - 17:45
Location: Room ZZ
subject of the symposium "Recent development of crystal growth, optical properties and devices in semiconducting silicides"　　　　　

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3月30−３１日　一般講演　（R会場）
谷氏（大阪市工研）の分科内招待講演は，シリサイド半導体のバンド構造，不純物準位，空孔形成について，実験との対比を行った示唆に富む内容であった．最近，鉄シリサイド中の固有欠陥が注目されている時期だけに的を得た講演であった．一般講演では，鉄シリサイド固有のPL寿命が16ns程度であること，発光強度がアニール雰囲気や結晶界面の整合性，多層化によって増大することが報告され，発光起源の理解が着実に進んでいる．また，BaSi2, Ca2Siなどアルカリ土類シリサイドの作製と物性の研究も着実に成果を上げている　　　　　　


■IUMRS-ICAM2003 C7 Symposium on Semiconducting Silicides, Yokohama October 11-13 2003.
　
　シリサイド半導体の国内初の国際シンポジウムが横浜で開催されました．
　78件の発表（招待講演10件，一般講演68件）があり盛大でした．

　プログラムは　http://www.mrs-j.org/ICAM2003/ie/html_p/PC-7.html　にＵＰされています．

　Borisenko先生，Arushanov先生，Mahan先生などシリサイド半導体の指導的研究者の講演は頭に滲みる見事なものでした．論文はThin Solid Filmsの特別号として2004年に出版すべく，編集作業終了しました．


■The Japan Society of Applied Physics, The 64th Autumn Meeting, Fukuoka University, Fukuoka, Japan, September 1- 2, 2003.
福岡大学9月1日〜2日　ＺＢ会場　シリサイド半導体関連口頭発表35件ありました．

　概要：
　　鉄シリサイド，バリウムシリサイド，マグネシウムシリサイドなどの成長に関する手法や評価法に進展があった．特に，今回の注目すべき研究は，β−FeSi2の発光が，基板からのSi拡散およびAlドープ（Siと置換）によって増強し，逆にMn，Coドープ（Feと置換）では減衰することが報告された（阪府大，神奈川産総研）．これはβ−FeSi2中のSi空孔またはFe未結合手や鉄原料の主な不純物であるMｎが非発光中心として働き，それを抑制すれば発光が増強することを示した重要な実験事実である．


■The Japan Society of Applied Physics and Related Societies, The 50th Spring Meeting, Kanagawa University, Kanagawa, Japan, March 27-30, 2003.

Date: March 29
Time: 9:30 - 18:30
Location: Room ZD
Presentation: 29 oral presentations
Topic: Fabrication method，Crystal structure measurement，Optical property etc.

Date: March 30
Time: 9:30 - 14:45
Location: Room ZD
Presentation: 16 oral presentations
Topic: Fabrication method，Optical property, Electrical Property etc.

The presentation of the 45 affairs was the thing about the silicide semiconductor. The session was prosperous.

Topics) The presentation of the 45 affairs was the thing about the β-FeSi2 semiconductor. As the overall impression, the reports about fabrication, synthesis, and physical properties in high pressure and optical property have been substantial. In particular, the following reports poked by surprise and were popular.
β-FeSi2 film fabrication from molten salt aiming at a non-vacuum method (Shizuoka Univ.)
Epitaxial growth of β-FeSi2 thin film on dielectrics substrate (YSZ) (Tokyo Inst. of Tech.)
Low temperature formation of β-FeSi2 using droplets (Tokyo Univ.)
Fabrication of continuous β-FeSi2 thin film on ground Si substrate (Shinshu Univ.)

The audiences of a maximum of 120 people gathered at the session, and the session was prosperous.


■The Japan Society of Applied Physics, The 63th Autumn Meeting, Niigata University, Niigata, Japan, September 24- 27, 2002.

Date: September 26
Time: 13:30 - 18:15
Location: Room ZC
Presentation: 18 oral presentations
Topic: Fabrication method，Crystal structure measurement，etc.

Date: September 27
Time: 9:30 - 12:45
Location: Room ZC
Presentation: 12 oral presentations
Topic: Optical property, Electrical Property etc.

The presentation of the 45 affairs was the thing about the silicide semiconductor.


■β-FeSi2, ZnO and InGaN were introduced as a luminescent nano-material with the high brightness in technical report (page 53), whose report was published as The policy for propulsion of research and development about nanotechnology and the material by Ministry of Education, Culture, Sports, Science and Technology.

http://www.mext.go.jp/b_menu/shingi/gijyutu/gijyutu2/


■The Japan Society of Applied Physics and Related Societies, The 49th Spring Meeting, Tokai University, Kanagawa, Japan, March 27-30, 2002.

Date: March 29
Time: 14:00 - 18:15
Location: Room V
Presentation: 1 invited presentation and 14 oral presentations

Date: March 30
Time: 9:30 - 11:30
Location: P 7
Presentation: 20 poster presentations

One invited presentation and 34 oral presentations were about the silicide semiconductor. The audiences of a maximum of 140 people gathered at the session, and the session was prosperous.
Topics) As the whole presentation, steady progress of research was seen. Especially, the following presentations were impressive.
Identification of (010)- or (001)-oriented β-FeSi2 grain by using extinction rule of electron diffraction (Kyushu Univ.)
Nano structure on surface, Nano structure on surface of Fe3Si magnetic silicide (NIMS, Sanken Osaka Univ., Tokyo Inst. of Tech.)
Non-crystalline β-FeSi2 thin films (Kyusyu Univ.)
Fabrication of BaSi2 and their physical properties (Tsukuba Univ.)

Date: March 28
Time: 14:00 - 16:55
Location: Room ZH
Symposium: “The semiconductor and the information industry examined by the viewpoint on environment.”
Prof. Maeda, on behalf of environmental semiconductor study group, gave a lecture on the present feature of β-FeSi2 researches and the perspective view on the basis of eco-electronics development’s roadmap.
The lecture on life cycle assessment (LCA) of semiconductor presented by Dr. Eric William (United Nations University) was impressive. Prof. Maeda keeps a copy of his article under his permission.


■The Japan Society of Applied Physics, The 62th Autumn Meeting, Aichi Institute of Technology, Aichi, Japan, September 11- 14, 2001.

Date: September 12
Time: 12:00 - 18:35
Location: Room YA
Presentation: 18 oral presentations

In session 12.1 (Semiconductors B (Exploratory Materials, Physics, Devices)), the presentation of the 19 affairs was the thing about the silicide semiconductor.

Topics) The following presentations were impressive.
β-FeSi2 p-n junction prepared by MOCVD (Kanagawa Ind. Tech. Res. Inst. , Tokyo Inst. Tech.) That’s ideal junction properties attracted attention. The efficient solar cell is expected.
Relationship between lattice strain and luminescence property expected by the 1st principle calculation (Tsukuba Univ.) 5% tensile strain of the direction of the a-axis was observed in Si/β-FeSi2 interface by high resolution TEM.
Synthesis of β-FeSi2 nano crystal by IBS and their luminescence property (Osaka Pref. Univ.) Investigating quantum confinement effects of exiciton by β-FeSi2 particles of 10nm
Selected orientated Growth of β-FeSi2 thin film by partially ionized vapor deposition (Tokyo Denki Univ.)
The Success of crystal growth of β-FeSi2 disk-like polycrystalline substrate (Ibaragi Univ.)
The control of electrical conductive type of β-FeSi2 thin film by Fe/Si ratio (Tsukuba Univ., Tokyo Inst. Tech.)
Fabrication of Ca2Si/Mg2Si/Si, MgCa/Si and MnFe/Si hetero-structure, Electrical band calculation and optical properties of Ca2Si (Shizuoka Univ., Osaka Pref. Univ., Milano Univ.)


Review about 「Temperature 1.6mm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region」is given by Dr. Suemasu.
He won the award for excellent paper of Japan Journal of Applied Physics.