[OPTICAL REVIEW Vol. 2, No. 4 (1995) 323-325]
Finite Element Analysis of Thermal Characteristics in Continuous Wave Long Wavelength Surface Emitting Lasers (II): Semiconductor Distributed Bragg Reflectors
Toshihiko BABA,1 Tomonobu KONDOH,1 Fumio KOYAMA2 and Kenichi IGA2
1Division of Electrical and Computer Engineering, Yokohama National University, 156 Tokiwadai, Hodogaya-ku, Yokohama, 240 Japan, 2Precision and Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226 Japan
(Received April 10, 1995; Accepted May 16, 1995)
We have numerically analyzed some thermal characteristics of cw long wavelength surface emitting lasers with epitaxially grown semiconductor distributed Bragg reflectors (DBRs). It was shown that the device thermal resistance for GaAs/AlAs DBRs epitaxially fused to GaInAsP/InP emitting layers is 1/3 of that for GaInAsP/InP DBRs and almost comparable to that for the optimum dielectric cavity. The threshold current lower than 10 mA and the electrical resistance lower than 100 Ω are necessary to obtain the cw operation beyond room temperature.
Key words : surface emitting laser, thermal resistance, finite element method, GaInAsP/InP, GaAs/AlAs