Seiji UCHIYAMA and Takao NINOMIYA

Optoelectronics Furukawa Laboratory, Real World Computing Partnership, c/o Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd., 2-4-3, Okano, Nishi-ku, Yokohama, 220 Japan

(Received January 12, 1996; Accepted January 31, 1996)

A multi-quantum-well (MQW) active layer has been introduced to 1.3-μm GaInAsP/InP surface-emitting (SE) lasers. Room temperature pulsed operation of a 1.3-μm MQW SE laser was obtained for the first time and its threshold current was 15 mA. CW (continuous wave) operation up to 7°C (threshold current I_th=7.6 mA at 7°C) was achieved.

Key words : surface emitting laser, multi-quantum well, low threshold current, buried heterostructure, Si/Al₂O₃, GaInAsP/InP