[OPTICAL REVIEW Vol. 4, No. 4 (1997) 459-464]

Large Size of Real-Time Bi12SiO20 Hologram Device Made with Inexpensive Wafer Cutting Method

Yukihisa OSUGI1 and Takumi MINEMOTO2

1Corporate Research and Development Group, NGK Insulators, Ltd., Suda-cho, Mizuho-ku, Nagoya, 467 Japan, 2Department of Computer and Systems Engineering, Kobe University, Rokkodai-cho, Nada-ku, Kobe, 657 Japan

(Received December 9, 1996; Accepted May 12, 1997)

The large real-time hologram device made by the previous Bi12SiO20 single crystal wafer cutting method poses several problems such as a large residue of material hinders the practical use. A study was carried out to fabricate a real-time hologram device using inexpensive laterally cut circular (1 0 0) Bi12SiO20 single crystal wafers which would be suitable for practical use for 3-dimensional display. An angle incident on a (1 0 0) wafer is applicable to the real-time hologram. An optimal electrode design for a device with uniform diffraction efficiency was considered, and the device properties were experimentally investigated.

Key words : hologram, photorefractive, 3-dimensional display, Bi12SiO20, diffraction