[OPTICAL REVIEW Vol. 5, No. 2 (1998) 69-71]
Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaInNAs/GaAs Single Quantum Well Laser Diode
Takeshi KITATANI,1 Masahiko KONDOW,1 Koji NAKAHARA,1 M. C. LARSON2,* and Kazuhisa UOMI2
1RWCP Optical Interconnection Hitachi Laboratory, c/o Central Research Laboratory, 2Central Research Laboratory, Hitachi, Ltd. 1-280, Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
(Received February 25, 1998; Accepted March 4, 1998)
Temperature stability of the threshold current and the lasing wavelength is investigated in a 1.3-μm GaInNAs/GaAs single quantum-well laser. The measured characteristic-temperature was 88 K. The small wavelength shift per change in temperature of 0.35 nm/°C was obtained, indicating the superior lasing-wavelength stability. Therefore, it is shown experimentally that GaInNAs is very promising material for the fabrication of light source with excellent high-temperature performance for optical fiber communications.
Key words : semiconductor junction lasers, quantum well