[OPTICAL REVIEW Vol. 9, No. 2 (2002) 54-59]
Improvement in Light Output of Thin-Film Vertical-CavitySurface-Emitting Lasers Transferred onto AlN Substrates
Toshihiko OUCHI*, Takahiro SATO and Hajime SAKATA
Canon Research Center, 5-1, Morinosato-Wakamiya, Atsugi, Kanagawa 243-0193, Japan
(Received September 6, 2001; Accepted January 16, 2002; Revised December 25, 2001)
Thin-film 850-nm vertical-cavity surface-emitting lasers (VCSELs) were improved in light output power by designing both the reflectivity of the distributed Bragg reflector on the light-emitting side and also the degree of de-tuning between the photoluminescence peak and the etalon wavelength. Thin-film VCSELs, which were fabricated on AlN substrates by a functional layer transfer technique, are attractive components for the hybrid integration of optoelectronic devices. Their maximum output power was 2.8 mW and their slope efficiency was 0.40 W/A for the 15-μm diameter VCSEL devices that we studied. Uniform spontaneous emission over the entire mesa area, and a single transverse laser mode up to 1.3 times the threshold current were confirmed by observing the near-field images.
Key words: semiconductor lasers, vertical-cavity surface-emitting lasers, optical interconnects, epitaxial layer transfer, hybrid integration