[OPTICAL REVIEW Vol. 9, No. 5 (2002) 186-188]
Reflection Induced Voltage Change of Surface Emitting Laser for Optical Probing
Jiro HASHIZUME*, Satoshi SHINADA, Fumio KOYAMA and Kenichi IGA†
Microsystem Research Center, P&I Lab., Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
(Received April 9, 2002; Accepted June 11, 2002)
We demonstrate a novel optical probing technique using the reflection-induced change in voltage of a GaAs vertical cavity surface emitting laser (VCSEL). We present the modeling and experiment of the VCSEL based probing. A two-dimensional image probing is successfully demonstrated.
Key words: VCSEL, reflection, voltage change, optical storage, contact head