Regular paper

[OPTICAL REVIEW Vol. 10, No. 4 (2003) 335-338]
© 2003 The Optical Society of Japan

Exposure Simulation Model for Chemically Amplified Resists

Sang-Kon KIM^*

Department of Physics, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791 South Korea

(Received November 27, 2002; Accepted May 6, 2003)

In this study, after Dill's model is discussed for transmittance and refractive indices of the non-chemically amplified resists, G- and I-line novolak resists, and the chemically amplified resists, a modification of Dill's model as a new exposure model is introduced. The simulation results obtained using this new model with the multi-thin film interface method and the Berning theory have shown a good matching to the experimental data. Also, the simulated transmittance change due to the exposure parameters are used to analyze the influence of the coefficients on the transmittance.

Key words: 193-nm lithography, lithography simulation, chemically amplified resist, exposure, exposure simulation

OPTICAL REVIEW HomePage

© 1994-2011 The Optical Society of Japan (An Affiliate of the Japan Society of Applied Physics)
Produced, Developed, and Maintained by The Optical Society of Japan (An Affiliate of the Japan Society of Applied Physics)
Printed in Japan by Komiyama Printing Co., Ltd.

mail to Editorial Office, OPTICAL REVIEW