Takeharu INNAMI, Ryushi FUJIMURA, Masahiro NOMURA, Tsutomu SHIMURA and Kazuo KURODA

Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan

(Received April 12, 2005; Accepted August 31, 2005)

The photorefractive effect was observed in He-ion-implanted semi-insulating GaN film in the UV spectral region. The photorefractive grating is induced by the electroabsorption effect near the band-edge. Two beam coupling experiments were performed at a wavelength of 363.8 nm. The experimental results indicate that absorption grating mainly contributes to the beam coupling.

Key words: photorefractive effect, gallium nitride, two-beam coupling, electroabsorption