[OPTICAL REVIEW Vol. 15, No. 6 (2008) 269-275]
© 2008 The Optical Society of Japan

The Effect of Body Bias of the Metal–Oxide–Semiconductor Field-Effect Transistor in the Resistive Network on Spatial Current Distribution in a Bio-Inspired Complementary Metal–Oxide–Semiconductor Vision Chip

Jae-Sung KONG, Hyo-Young HYUN1, Sang-Ho SEO, and Jang-Kyoo SHIN*

School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-ku, Daegu 702-701, Korea
1Department of Sensor and Display Engineering, Kyungpook National University, 1370 Sankyuk-dong, Buk-ku, Daegu 702-701, Korea

(Received February 12, 2008; Accepted August 21, 2008)

Complementary metal–oxide–semiconductor (CMOS) vision chips for edge detection based on a resistive circuit have recently been developed. These chips help in the creation of neuromorphic systems of a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends predominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the metal–oxide–semiconductor field-effect transistor for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160× 120 CMOS vision chips have been fabricated using a standard CMOS technology. The experimental results nicely match our prediction.

Key words: vision chip, edge detection, body effect, resistive network

*E-mail address: jkshin@ee.knu.ac.kr