[OPTICAL REVIEW Vol. 16, No. 2 (2009) 226-228]
© 2009 The Optical Society of Japan
Deposition of Silicon Oxynitride Films by Ion Beam Sputtering at Room Temperature
Huang-Lu CHEN1 and Jin-Cherng HSU2
1Graduate Institute of Applied Science and Engineering, Fu-Jen Catholic University, Taipei County 24205, Taiwan
2Department of Physics, Fu-Jen Catholic University, Taipei County 24205, Taiwan
(Received July 16, 2008; Accepted December 17, 2008)
Silicon oxynitride films, possessing various compounds of SiO2 and Si3N4, were deposited by ion beam sputtering at room temperature. This technique can easily and precisely control the refractive index and composition of the silicon oxynitride film. Properties of these films, such as the refractive index, the extinction coefficient, the surface roughness, and so on were measured in this study.
Key words: IBSD, ion beam sputtering, silicon oxynitride, room temperature