Chin-Hsiang CHEN^*

Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 830, Taiwan, R.O.C.

(Received August 31, 2008; Accepted March 18, 2009)

It has been demonstrated that self-organized InGaN nanodots can be vertically grown by utilizing metal–organic chemical vapor deposition epitaxy (MOCVD). We report the investigation of the characteristics of InGaN with various indium contents and the fabrication of self-organized InGaN nanodots will also be discussed. Using a temperature ramping growth method, self-organized InGaN nanodots were formed vertically protruding above the sample. It was found that typical height of these nanodots is around 45 nm with an average width of 5 nm. It was also found that the local density of the vertically grown self-organized InGaN nanodots could reach 8.2× 10¹² cm^-2. These self-organized InGaN nanodots will result in a red shift in PL spectrum indicating that In droplets act as an indium source to form an InGaN intermediate layer near the heterointerface.

Key words: self-organized, MOCVD, InGaN, nanodots, PL

^*E-mail address: chchen@csu.edu.tw