Rei HASHIMOTO^*, Hung HUNG, Jongil HWANG, Shinji SAITO, and Shinya NUNOUE

Corporate Research & Development Center, Toshiba Corporation, Kawasaki 212-8582, Japan

(Received May 31, 2012; Revised July 10, 2012; Accepted July 13, 2012)

High-power 2.8 W blue-violet InGaN LD was fabricated, applying AlN facet coating technology. The AlN was found to be crystallized on the facets and very stable even after 2200 h cw operation. Luminous flux over 380 lm is obtained with a phosphor-converted LD excitation white light source using just a single laser chip at 1 A operating current.

Key words: blue-violet laser, InGaN, laser diode excitation white light source, facet coating, AlN/SiN/SiO₂, reliability

^*E-mail address: rei.hashimoto@toshiba.co.jp