The 6th Symposium on Semiconductiong Silicides
Organizer: The Japan Society of Applied Physics, Semiconductiong Silicides and Related Materials
Date : September 4 (Sat.) 2004 10:00 - 16:00
Place: SENDAI INTERNATIONAL CONFERENCE CENTER　(Aobayama, Aoba-ku,Sendai)
Main Topics: Microstructures of Semiconducting Silicides

Program
(1) Microstructural Characterizations of Silicide Semiconductor Thin Films and Bulk Crystals
　　 -The case of Mg2Si, Ca2Si, β-FeSi2,and MnSi1.7
　　○ H. Tatsuoka, (Shizuoka University)

(2) Cross sectional transmission electron microscope (XTEM) observation of interface structure of β-FeSi2/Si(100)
　　 prepared by ion beam sputter deposition (IBSD) method
　　○ M. Sasase 1, K. Shimura 2, K. Yamaguchi 2, H. Yamamoto 2, S. Shamoto 2, K. Hojo 2
　　（1:The Wakasa Bay Energy Research Center , 2:Newtron Science Research Center, JAERI）

(3) β-FeSi2 thin films formation process studied by plan-view TEM observation
　　○ K. Yamaguchi, S. Igarashi, K. Shimura, H. Yamamoto, S. Shamoto, K. Hojo
　　(Newtron Science Research Center JAERI)

(4) Characterization of iron-disilicide surface / interface by synchrotron X-ray photoelectron spectroscopy
　　○ H. Yamamoto, T. Saito, K. Yamaguchi, K. Shimura, S. Shamoto, K. Hojo
　　(Newtron Science Research Center, JAERI)

(5) In-Situ Characterization of Silicide Islands on Si substrates using UHV-TEM/STM Integrated Characterization System
　　○ M. Tanaka
　　(In-situ Electron Microscopy Laboratory, National Institute for Materials Science)

(6) Microstructure analyses of silicide thin films by using LV-SEM and TEM
　　○ M. Itakura (Kyushu University)

(7) Growth of iron and platinum silicide on a Si(111)7×7 surface
　　○ S. Sudo (Tohoku University)

(8)　Free Discussion
Registration Fee : Regular : \1,000.- ( Including Abstract Book)
Students are Admission Free (A charge of Abstract Book : \1,000.-)

Organizer
Professor H. Tatsuoka
Department of Electrical and Electronics Engineering, Faculty of Engineering,
Shizuoka University
Hamamatsu, Shizuoka 432-8561, Japan
Phone/Fax　053-478-1099
E-mail : tehtats@ipc.shizuoka.ac.jp
URL http://annex.jsap.or.jp/silicides/

The 8th Summer School on Semiconducting Silicides
Organizer: The Japan Society of Applied Physics, Semiconductiong Silicides and Related Materials Society
Outline: Crystal growth and physical properties of semiconductiong silicides are lectured for young scientists, in the beautiful site by Lake Biwa.
We welcome your positive participation of young researchers.
Date: July 24 (Sat.) - 25(Sun.) 2004
Place: Biwako Conference Center http://www.biwako-cc.com/
Hikone, Shiga, Japan
Phone : 0749-43-3000、FAX : 0749-43-3999、bcc@biwako-cc.com
Registration Fee : Regular : \18,000.-
Registration Fee : Students : \13,000.- ( Including Hotel Charge and Meals Cost)

Program
July 24 (Sat.)
Registration 13:00-13:30

13：40　　　　　　 Opening Remarks
13：50　　　　　　 Welcome Speech
14：00〜15:00　　Special Lecture 1 Behavior of Transition metal and Complex Defect in Silicon
　　　　　　　　　　T. Sadoh (Kyushu University)
15：00〜15：30　 Coffee Break
15：30〜16：30　 Special Lecture 2 Formation of Bulk β-FeSi2 Crystals
　　　　　　　 　　　I. Yamauchi (Osaka University)
16：30〜17：30　 Special Lecture 3 Design and Synthesis of Half-Metallic Ferromagnetic Materials
　　　　　　　　　　H. Akinaga (AIST)
17：30〜18：30　　Coffee Break
18：30〜20：20　　Banquet
20：20〜20：30　　Coffee Break
20：30〜22：30　　Night Session
　　　　　　　　 　　Challanges for Application of Semiconducting Silicides to the Opto Electronics
Free Discussion

■July 25(Sun.)
7：30〜8:30　　 Breakfast
　　　　　　　　
General Lecture 1 (Talk: 15 min, Discussion: 5 min)
Chair: M. Suzuki (Kyoto University)
9：00〜9：20　　Mechanism of low temperature formation of polycrystalline β-FeSi2 droplets by pulsed laser deposition and thermal annealing.
　　　　　　　　　　S. Nakamura (Tokyo Metropolitan Institute of Technology M )
9：20〜9：40　　Growth and characterizations of Mg2Si thin films
　　　　　　　　　　Y. Mizuyoshi (Shizuoka University M )
9：40〜10：00　 Growth of β-FeSi2 layers from a molten salt
　　　　　　　　　　T. Oishi (Shizuoka University M )
10：00〜10：20　Solution growth of bulk β-FeSi2 using the Zn-solvent
　　　　　　　　　　Y. Aoki (Ibaraki University M)
10：20〜10：30　Coffee Break

General Lecture 2
Chair: H. Udono (Ibaraki University)
10：30〜10：50　Growth and characterization of β-FeSi2 crystals for light-emitting devices
　　　　　　　　　　A. Mishina (Osaka University)
10：50〜11：10　Formation of beta-FeSi2 films and their magnetoresistance effect
　　　　　　　　　　M. Takenosita (Saitama University)
11：10〜11：30　Luminescence properties of Si/β-FeSi2 particles/Si structure by Using muitiple β-FeSi2 particle layers.
　　　　　　　　　　T. Haruhara (Tsukuba University)
11：30〜11：50 Fabrication of Light-Emitting Diode withβ-FeSi2 active layer
　　　　　　　　　　M. Takauji (Tsukuba University)
１１：50〜13：00　Lunch

General Lecture 3
Chair: H. Tatsuoka (Shizuoka University)
13：00〜13：20　Si-Based Ternary Alloy Semiconductor Ba1-xSrxSi2 Thin Films on Si(111) Substrates Grown by Molecular-beam Epitaxy
　　　　　　　　　　Y. Inomata (Tsukuba University)
13：20〜13：40　 Recycling of Noble Metals from Cellular Phones
　　　　　　　　　　K. Takahashi (Yokohama-metal.co. Saitama University)
13：40〜14：40　Special Lecture 4:　Fabrication of High Quality β-FeSi2 Thin Film by CVD Method and Their Characterization
　　　　　　　　　　K. Akiyama (Kanagawa Industrial Technology Research Institute)
14:40　　　　　　Closing Remarks

Organizing comittee
T. Sadoh (Kyushu University)
T. Yoshitake (Kyushu University)
Y. Maeda (Kyoto University)
M. Suzuki (Kyoto University)
Y. Terai (Osaka Prefecture University)


The 5th Symposium on Semiconductiong Silicides
Main Topics: Control of the conduction type and defects in Semiconducting Silicides
Organizer: The Japan Society of Applied Physics, Semiconducting Silicides and Related Materials Society
Date : April 1 2004 10:00 ? 16:00
Place : Meiji University, Surugadai Campus ,(1-1 Kanda Surugadai Chuyoda-ku Tokyo, Japan)

Program
10:00-10:05 Opening Remarks
10:05-10:45 Control of the conduction type of β-FeSi2 films grown on Si(001) Substrates
　　　　　　　○T. Suemasu, M. Takauji (Tsukuba University), K. Takakura (Kumamoto National College of Technology), F. Hasegawa (Tsukuba University)
10:45-11:25 Attempt on Si-site doping inβ-FeSi2 thin film
　　　　　　　○K. Akiyama (Kanagawa Industrial Technology Research Institute)
11:25-12:05 Effect of impurity doping on photoluminescence properties inβ-FeSi2
　　　　　　　○Y. Terai (Osaka Prefecture University), Y. Maeda (Kyoto University)
12:05-13:20 Lunch
13:20-14:00 Conduction Control and Thermoelectric Properties for Sinteredβ-FeSi2
　　　　　　　○Y. Isoda (In-situ Electron Microscopy Laboratory, National Institute for Materials Science)
14:00-14:40 Defect and Electrical property of Semiconducting Silicides
　　　　　　　○T. Miki, A. Kai, T. Murata (Yamaguchi University)
14:40-15:20 Electrical Properties of Mg2Si-based Compounds
　　　　　　　○Y. Noda (Shimane University)
15:20-16:00　Free discussion

Registration Fee : Regular : \1,000.- ( Including Abstract Book)
Students are Admission Free (A charge of Abstract Book : \1,000.-)

Organizer
Professor H. Tatsuoka
Department of Electrical and Electronics Engineering, Faculty of Engineering,
Shizuoka University
Hamamatsu, Shizuoka 432-8561, Japan
Phone/Fax　053-478-1099
E-mail : tehtats@ipc.shizuoka.ac.jp
URL http://annex.jsap.or.jp/silicides/

The 6th Summer School on Semiconducting Silicides

Outline: The summer school on semiconducting silicides was held for studying about semiconducting silicides since 1997. Physics and chemistry, crystal growth and related technology and application of semiconducting silicides are lectured for students and young scientists.

Organizer: The Japan Society of Applied Physics, Semiconducting Silicides and Related Materials
Co-organizer: Japan Society of Kankyo Semiconductors, Japan Atomic Energy Research Institute (JAERI)

Date: August 5(Mon.) ? 6(Tue.) 2002
Place: Tokai Resarch Establishment, JAERI
Stay: Wel-Sanpia Hitachi (Kouseinenkin Kaikan), 6-1 Minato, Hitachi, Ibaraki 319-1223, Japan

Number of attendance: 62
Abstract book of the summer school was published in the Conference Report of JAERI (JAERI-CONF 2002-014)

Program
August 5 (Mon.)
13：05　Opening Remarks
13：10　Special Lecture
Recent Progress of Silicon-based Heterostructure Technologies for Novel Devices
M. Miyao (Kyushu University)
14：30-16：00　Session 1: Fundamentals and Optical Properties of Semiconducting Silicides
Session Chair: K. Hojyo (JAERI）
16：00-17：00　Poster Session
18：30-20：00　Banquet
20：00-22：00　Night Session:　 R&D Road Map to Semiconducting Silicides
Session Chair: Y. Maeda (Osaka Pref. Univ.）
　
August 6 (Tue.)
9：30-11：30　Session 2: Crystal Growth and Thin Film Epitaxy of Semiconducting Silicides
Session Chair: H. Tatsuoka (Shizuoka Univ.) and T. Suemasu (Tsukuba Univ.)　　　　
11：30-12：10　Session 3: Novel Semiconducting Silicides
Session Chair: T. Sado (Kyushu Univ.)　　　　　　　　
12：10　Closing Remarks
12：30-13：30　Lunch and Free Discussion

The organizing committee would like to express great thanks to the HORIBA JOBIN YVON,S.A.S, TOYO Corporation and Japan Society of Applied Physics for their financial support.