2013 Silicon Nanoelectronics Workshop
Invited Speakers

 


June 9-10, 2013, Rihga Royal Hotel Kyoto, Kyoto, Japan

Sponsored by
the Japan Society of Applied Physics and
the IEEE Electron Device Society

PLENARY TALKS

Rainer Waser
Forschungszentrum Jülich
"Fundamentals of Redox-Based Resistive Switching -Materials, Switching Kinetics, and Scaling Potential of ReRAM Devices."

INVITED TALKS

Kaustav Banerjee
University of California, Santa Barbara
"Modeling Nanodevice"

Shinji Migita
AIST
"MOSFET Scaling to 3-nm-Long and 1-nm-Thick Channel"

Katsuhiro Tomioka
Hokkaido University
"III-V Nanowire Channels on Si: Vertical FET Applications"

Hiroshi Sunamura
Renesas Electronics
"BEOL"