IWDTF 2023
2023 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
─ Science and Technology ─
October 23 – 25, 2023,
Kanazawa Chamber of Commerce and Industry, Ishikawa, Japan
Sponsored by The Japan Society of Applied Physics, Thin Film and Surface Physics Division
Endorsed by The Japan Society of Applied Physics, Silicon Technology Division / IEEE Electron Device Society Japan Chapter / IEICE Electronics Society
Corporate sponsor: KIOXIA / Tokyo Electron
日 時：2023年10月23日(月) − 25日(水)
場 所：金沢商工会議所
URL： http://iwdtf.org
SCOPE:
The 2023 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (IWDTF2023) will be held on Oct. 23 –25, 2023 at Kanazawa Chamber of Commerce and Industry, Ishikawa, Japan. The IWDTF started in 1999, based on a domestic annual workshop on ultrathin silicon dioxide films. The IWDTF2023 is the 11th workshop, which will focus on the science and technologies of dielectric films for electron devices, such as ultrathin dielectrics, high-k dielectrics, and ferroelectrics. In addition to the papers on materials and processes of dielectrics for conventional logic devices, the papers for various electron devices including the memory, the power, the analog, the sensor, and the display devices are welcomed. The IWDTF will provide a great opportunity for information exchange and discussions at forefront of the researchers on future electron devices. The papers on both experimental and theoretical studies, for the deep understanding of the properties of dielectric films and their interfaces, are welcomed. The workshop will consist of invited and contributed talks. Selected topics of current interests will be reviewed by several invited talks.
Focus Session Topics
⚫ Functional Thin Films for AI Applications
⚫ h-BN and 2-Dimensional-Layered Dielectrics
Papers are solicited in, but not limited to, the following area:
⚫ Emerging Memory and Applications
⚫ Advanced Channel Materials
⚫ Electrical and Optical Characterization
⚫ Functional Oxides and Interface
⚫ Channel Technologies
⚫ Ferroelectric Thin Films
⚫ SiC MOS Device and Processes
⚫ Widegap Semiconductor
⚫ Interfaces, Materials and Characterizations
KEYNOTE SPEAKER:
Hideo Hosono (Tokyo Institute of Technology & National Institute for Materials Science) “Oxide Semiconductor: fundamentals and progress”
Cheol Seong Hwang (Seoul National University) “Functional memristive hardwares for unconventional computing”
INVITED SPEAKERS:
Konrad Seidel (Fraunhofer IPMS, Germany) “Integration of Ferroelectric Devices for Advanced in-Memory Computing Concepts (tentative)”
Takeaki Yajima (Kyushu University) “Designing neuromorphic devices using protons”
Hiroki Ago (Global Innovation Center (GIC), Kyushu University) “Wafer-scale synthesis and applications of multilayer hexagonal boron nitride (tentative)”
Tomoki Machida (Institute of Industrial Science, University of Tokyo) “Carrier transport in van der Waals junctions of h-BN and two-dimensional materials”
Hisanori Aikawa (Kioxia Korea Corporation, Seoul, Korea) “First demonstration of full integration and characterization of 4F2 1S1M cells with 45 nm of pitch and 20 nm of MTJ size”
Tsunenobu Kimoto (Kyoto University) “Physics and Performance Improvement of SiC MOSFETs”
Hiroshi Funakubo (Tokyo Institute of Technology) “Stabilization and identification of ferroelectric HfO2 thin films”
Toshiki ITO (Canon Inc.) “Development of Nanoimprint Lithography Tool”
Jin-Seong Park (Hanyang University) “Atomic Layer Deposited Oxide Semiconductor as a New Channel Material for BEOL FET Application: Potential & Prospect”
Sanghun Jeon (Korea Advanced Institute of Science and Technology) TBA
IMPORTANT DATES:
Abstract deadline: August 10, 2023
Deadline for Early Registration: September 23, 2023
Workshop: October 23-25, 2023
Full paper (JJAP) deadline: November 30, 2023
SUBMISSION OF PAPERS:
Paper acceptance is based on the submitted abstracts. The work must be original and unpublished. The authors are encouraged to submit a 2-page maximum camera-ready abstract written in English in A4-size by Aug 10, 2023, to the workshop website at http://iwdtf.org
The extended abstract should clearly and concisely state the originality and specific results of the work. The detailed information about the format will be provided at the workshop website. Papers to be presented at the workshop will be selected by the program committee on the basis of the content of submitted abstracts.
SUBMISSION OF FULL-PAPERS TO THE SPECIAL ISSUE OF JJAP:
Authors of papers accepted in IWDTF2023 are encouraged to submit the original and significant part of the papers to the Special Issue of the Japanese Journal of Applied Physics (JJAP). The deadline of the paper submission is Nov. 30, 2023. Please refer to the IWDTF2023 website for the detailed information. Those who wish to submit a paper to the special issue should follow the instructions for preparation of manuscript for JJAP. Please note that the manuscript will be published after the usual review process in JJAP.
REGISTRATION:
Registration for the IWDTF2023 should be made on the workshop website.
| Registration Fees | Early-Registration | Regular Registration |
| General Participants | ¥30,000 | ¥35,000 |
| JSAP or IEEE member | ¥25,000 | ¥30,000 |
| JSAP, Thin Film and Surface Physics Division Members | ¥23,000 | ¥28,000 |
| Student Participants | ¥10,000 | ¥10,000 |
| Banquet Fees | |
| General Participants | ¥5,000 |
| JSAP or IEEE member | ¥5,000 |
| JSAP, Thin Film and Surface Physics Division Members | ¥5,000 |
| Student Participants | ¥2,000 |
COMMITTEE:
Organizing Committee
Chairperson: Eisuke Tokumitsu (Japan Advanced Institute of Science and Technology)
Members: Hiroshi Nohira (Tokyo City University), Tetsuro Endo (Tohoku University), Kazuyuki Hirose (Japan Aerospace Exploration Agency), Chihoko Kaneda (Tohoku University), Seiichi Miyazaki (Nagoya University), Akira Nishiyama (KIOXIA), Kenji Shiraishi (Nagoya University), Hiroyuki Kageshima (Shimane University), Yukinori Morita (National Institute of Advanced Industrial Science and Technology), Shin’ichi Takagi (The University of Tokyo), Heiji Watanabe (Osaka University)
Steering Committee
Chairperson: Shinji Migita (National Institute of Advanced Industrial Science and Technology)
Vice Chairperson: Akinobu Teramoto (Hiroshima University)
Secretary: Takeshi Kawae (Kanazawa University)
Treasurer: Dai Okamoto (Toyama Prefectural University)
Members: Kuniyuki Kakushima (Tokyo Institute of Technology)
Program Committee
Chairperson: Shun-ichiro Ohmi (Tokyo Institute of Technology)
Vice Chairperson: Yuichiro Mitani (Tokyo City University), Kenji Okada (Rapidus)
Chief Editor of JJAP Special Issue: Keisuke Yamamoto (Kyushu University), Akio Ohta (Fukuoka University)
Secretary: Tomoyuki Suwa (Tohoku University), Takaaki Miyasako (Murata Manufacturing)
Members: Kojii Kita (The University of Tokyo), Toru Akiyama (Mie University), Reika Ichihara (KIOXIA), Jun Okuno (Sony Semiconductor Solutions), Tomiya Ono (Kobe University), Hiroshi Ashihara (KOKUSAI Electric), Hisashi Shima (National Institute of Advanced Industrial Science and Technology), Takanobu Watanabe (Waseda University), Masao Inoue (Renesas Electronics), Noriyuki Taoka (Nagoya University), Mitsuru Sometani (National Institute of Advanced Industrial Science and Technology), Motoyuki Sato (Tokyo Electron), K. S. Chang-Liao (National Tsing Hua University), Shengkai Wang (Institute of Microelectronics of the Chinses Academy of Sciences), Changhwan Choi (Hanyang University), Yao-Jen Lee (Yangming Jiaotong University), S.M. Yoon (Kyung Hee University)
FURTHER INOFORMATION:
Please visit our workshop website: http://iwdtf.org
INQUIRY:
IWDTF 2023 Secretariat
E-mail:
更新：2023/8/5