IWDTF 2019
2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES（次世代電子デバイスのための誘電体薄膜－科学と技術－2019）
日時
2019年11月18日（月）～20日（水）
場所
東京工業大学 大岡山キャンパス
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SCOPE
· Electron device application of dielectric thin films
· Material design of dielectric thin films
· Growth and related process of dielectric thin films
· Characterization and control of dielectrics, dielectrics surfaces, and dielectrics interfaces
· Electrical characterization of dielectrics, dielectrics surfaces, and dielectrics interfaces
· Surface preparation and cleaning issues for dielectrics
· Dielectric wearout and reliability
· Dielectric reliability related to process integration
· Surface passivation technology
· Theoretical approaches to dielectrics, dielectrics surfaces, and dielectrics interfaces
KEYNOTE SPEAKER
Ernest Wu (IBM): “Facts and Myths of Dielectric Breakdown Processes”
Shinichi Takagi (Univ. Tokyo): “Importance of semiconductor MOS interface control on advanced electron devices”
INVITED SPEAKER
Yi Zhao (Zhejiang Univ.): “Ge-based Non-Volatile Memories”
Tuo-Hung Hou (National Chiao Tung Univ.): “Emerging memory for data-centric computing”
Tadashi Yamaguchi (Renesas Electronics): “Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique”
Kohsuke Nagashio (Univ. Tokyo): “Understanding interface properties in 2D heterostructure FETs”
Hiroshi Yano (Univ. Tsukuba): “SiC MOS interface: what limits the channel mobility? ”
Daigo Kikuta (Toyota Central R&D Labs.):”Improvement of gate oxide reliability and instability in GaN-based MOS devices”
TOPICAL SESSION
“Achievement in Understanding Oxidation Processes of Si, Ge, SiGe, SiC, and GaN – 20 Years Anniversary –”
Yuji Takakuwa (Tohoku Univ.), Takayoshi Shimura (Osaka Univ.), Tomonori Nishimura (Univ. Tokyo), Takuji Hosoi (Osaka Univ.), Yoshihiro Irokawa (NIMS)
問合せ
IWDTF 2019 事務局 〒158-0082 東京都世田谷区等々力8-15-1 東京都市大学総合研究所
Tel：03-5706-3691 Fax：03-5706-3125 E-mail: iwdtf2019@ssl.ee.tcu.ac.jp
更新：2019/9/23