IWDTF 2021
2021 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
─ Science and Technology ─
November 14 – 16, 2021, On-line virtual
Sponsored by The Japan Society of Applied Physics
Co-sponsored by JSAP Thin Film and Surface Physics Division
Endorsed by JSAP Silicon Technology Division / IEEE EDS Japan Chapter
日 時：2021年11月14日(日) − 16日(火)
場 所：オンライン開催
URL： http://iwdtf.org
SCOPE:
The 2021 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (IWDTF2021) will be held on-line, on November 14-16, 2021. The IWDTF started in 1999, based on a domestic annual workshop on ultrathin silicon dioxide films. The IWDTF2021 is the tenth workshop, which will focus on the science and technologies of dielectric films for electron devices, such as ultrathin dielectrics, high-k dielectrics, and ferroelectrics. In addition to the papers on materials and processes of dielectrics for conventional logic devices, the papers for various electron devices including the memory, the power, the analog, the sensor, and the display devices are welcomed. The IWDTF will provide a great opportunity for information exchange and discussions at forefront of the researches on future electron devices. The papers on both experimental and theoretical studies, for the deep understanding of the properties of dielectric films and their interfaces, are welcomed. The workshop will consist of invited and contributed talks. Selected topics of current interests will be reviewed by several invited talks.
Papers are solicited in, but not limited to, the following area:
⚫ Electron device application of dielectric thin films
⚫ Material design of dielectric thin films
⚫ Growth and related process of dielectric thin films
⚫ Characterization and control of dielectrics, dielectrics surfaces, and dielectrics interfaces
⚫ Electrical characterization of dielectrics, dielectrics surfaces, and dielectrics interfaces
⚫ Surface preparation and cleaning issues for dielectrics
⚫ Dielectric wear-out and reliability
⚫ Dielectric reliability related to process integration
⚫ Surface passivation technology
⚫ Theoretical approaches to dielectrics, dielectrics surfaces, and dielectrics interfaces
KEYNOTE SPEAKER:
Ken Takeuchi (Univ of Tokyo) “Co-design of non-volatile memory devices, circuits and systems in AI era”
Ming Liu (IMECAS)“Oxide based resistive switching device for memory and computing applications”
INVITED SPEAKERS:
Byun Jin Cho (KAIST)“Anti-ferroelectric HZO blocking layer in charge trap flash memory device”
Steven George (Univ of Colorado)“Thermal atomic layer etching of dielectric films and pathways for selectivity”
Masahiro Hori (Shizuoka Univ)“Charge pumping under spin resonance conditions in silicon MOSFETs”
Masaru Izawa (Hitachi High-Tech)“High selective thermal-cyclic ALE for conformal etch and recess of thin films”
Jiyoung Kim (Univ of Texas at Dallas)“Effects of oxidation reactants of thermal ALD for ferroelectric HZO films”
Takao Marukame (Toshiba)“Metal-oxide synapse devices and their application to neuromorphic analog neuron circuits”
Terence Mittmann (NaMLab gGmbH)“Ferroelectric phase stabilization influences HfO2-based device performance”
Norio Tokuda (Kanazawa Univ)“Advances in diamond MOS interface”
Kasidit Toprasertpong (Univ of Tokyo)“HfZrO2-based ferroelectric FETs for emerging computing technologies”
Lin-Wang Wang (Berkeley National Lab)“Ultrathin dielectric integration and reliability on 2D semiconductors”
Xinran Wang (Nanjing Univ)“Atomistic plane wave pseudopotential simulations for MOSFET devices”
IMPORTANT DATES:
Abstract deadline: August 20, 2021
Notification of acceptance: By September 30, 2021
Workshop: November 14-16, 2021
Full paper (JJAP) deadline: December 18, 2021 (tentative)
SUBMISSION OF PAPERS:
Paper acceptance is based on the submitted abstracts. The work must be original and unpublished. The prospective authors are requested to submit abstract in PDF format of two pages in length, including all figures and tables, by Aug 20, 2021 to the workshop website at http://iwdtf.org
The two-page abstracts must be written in English and typed in an area of 8.5×11 inches or A4 size. The first page must be headed by the title of the paper, author(s), affiliation(s), address, phone number, and e-mail address of the corresponding author. The abstract must clearly and concisely state the specific results of the work and its originality. The detailed information about the format will be provided at the workshop website. Papers to be presented at the workshop will be selected by the program committee on the basis of the content of submitted abstracts. The decision will be notified by e-mail until the middle of September. In the 2021 conference, all contributors will be requested to give an oral presentation conforming to 20 min format. Only when we have more contributing papers than expected some papers may be presented in poster format (on-line).
SUBMISSION OF FULL-PAPERS TO THE SPECIAL ISSUE OF JJAP:
Authors of papers accepted in IWDTF2021 are encouraged to submit the original and significant part of the papers to the Special Issue of the Japanese Journal of Applied Physics (JJAP). The deadline of the paper submission is Dec 18, 2021 (temporary). Please refer to the IWDTF2021 website for the detailed information. Those who wish to submit a paper to the special issue should follow the instructions for preparation of manuscript for JJAP. Please note that the manuscript will be published after the usual review process in JJAP.
REGISTRATION:
Registration for the IWDTF2021 should be made on the workshop website.
| Participants | Registration fee |
| Regular | ¥20,000 |
| JSAP or IEEE member | ¥10,000 |
| JSAP or IEEE member | ¥10,000 |
| JSAP Thin Film and Surface Physics Division member | ¥8,000 |
| Student | ¥5,000 |
COMMITTEE:
Organizing Committee
Chairperson: Y. Morita (AIST)
Members: T. Chikyo (NIMS), T. Endoh (Tohoku Univ.), K. Hirose (JAXA), H. Kageshima (Shimane Univ.), C.Kaneta (Tohoku Univ.), S. Miyazaki (Nagoya Univ.), A. Nishiyama (KIOXIA), H. Nohira (Tokyo City Univ.), K. Shiraishi (Nagoya Univ.)
Steering Committee
Chairperson: K. Kakushima (Tokyo Inst. of Tech.)
Vice Chairperson: T. Kawanago (Tokyo Inst. of Tech.)
Members: R. Yokogawa (Meiji Univ.), D. Okamoto (Toyama Pref. Univ.)
Program Committee
Chairperson: K. Kita (Univ. of Tokyo)
Vice Chairperson: M. Inoue (Renesas Elec.), N. Taoka (Nagoya Univ.)
Members: A. Ohta (Nagoya Univ.), S. Ohmi (Tokyo Inst. of Tech.), M. Sometani (AIST), Y. Akasaka (TokyoElectron), T. Akiyama (Mie Univ.), H. Ashihara (KOKUSAI Electric), K. Eriguchi (Kyoto Univ), R. Ichihara (KIOXIA), Y. Mitani (Tokyo City Univ.), Y. Mori (Hitachi), T. Nabatame (NIMS), O. Nakatsuka (Nagoya Univ.), J. Okuno (Sony Semicond. Solutions), T. Ono (Kobe Univ.), K. Sawano (Tokyo City Univ.), H. Shima (AIST), T. Shimizu (NIMS), S. Takagi (Univ. of Tokyo), A. Teramoto (Hiroshima Univ.), E. Tokumitsu (JAIST), H. Watanabe (Osaka Univ.), T. Watanabe (Waseda Univ.), B. H. Lee (POSTECH), K.-S. Chang-Liao (National Tsing Hua Univ.), S. Wang (IMECAS), C. Choi (Hanyang Univ.)
FURTHER INOFORMATION:
Please visit our workshop website: http://iwdtf.org
INQUIRY:
IWDTF 2021 Secretariat
E-mail: iwdtf-group@g.ecc.u-tokyo.ac.jp
更新：2021/6/22