2023 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
─  Science and Technology  ─

October 23 – 25, 2023,
Kanazawa Chamber of Commerce and Industry, Ishikawa, Japan

Sponsored by The Japan Society of Applied Physics, Thin Film and Surface Physics Division
Endorsed by The Japan Society of Applied Physics, Silicon Technology Division / IEEE Electron Device Society Japan Chapter / IEICE Electronics Society
Corporate sponsor: KIOXIA / Tokyo Electron

日 時：2023年10月23日(月) − 25日(水)  

場 所：金沢商工会議所

URL： http://iwdtf.org

SCOPE:

The 2023 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (IWDTF2023) will be held on Oct. 23 –25, 2023 at Kanazawa Chamber of Commerce and Industry, Ishikawa, Japan. The IWDTF started in 1999, based on a domestic annual workshop on ultrathin silicon dioxide films. The IWDTF2023 is the 11th workshop, which will focus on the science and technologies of dielectric films for electron devices, such as ultrathin dielectrics, high-k dielectrics, and ferroelectrics. In addition to the papers on materials and processes of dielectrics for conventional logic devices, the papers for various electron devices including the memory, the power, the analog, the sensor, and the display devices are welcomed. The IWDTF will provide a great opportunity for information exchange and discussions at forefront of the researchers on future electron devices. The papers on both experimental and theoretical studies, for the deep understanding of the properties of dielectric films and their interfaces, are welcomed. The workshop will consist of invited and contributed talks. Selected topics of current interests will be reviewed by several invited talks.

Focus Session Topics
⚫ Functional Thin Films for AI Applications
⚫ h-BN and 2-Dimensional-Layered Dielectrics

Papers are solicited in, but not limited to, the following area:
⚫ Emerging Memory and Applications
⚫ Advanced Channel Materials
⚫ Electrical and Optical Characterization
⚫ Functional Oxides and Interface
⚫ Channel Technologies
⚫ Ferroelectric Thin Films
⚫ SiC MOS Device and Processes
⚫ Widegap Semiconductor
⚫ Interfaces, Materials and Characterizations

KEYNOTE SPEAKER:

Hideo Hosono (Tokyo Institute of Technology & National Institute for Materials Science) “Oxide Semiconductor: fundamentals and progress”
Cheol Seong Hwang (Seoul National University) “Functional memristive hardwares for unconventional computing”

INVITED SPEAKERS: 

Konrad Seidel (Fraunhofer IPMS, Germany) “Integration of Ferroelectric Devices for Advanced in-Memory Computing Concepts (tentative)”
Takeaki Yajima (Kyushu University) “Designing neuromorphic devices using protons”
Hiroki Ago (Global Innovation Center (GIC), Kyushu University) “Wafer-scale synthesis and applications of multilayer hexagonal boron nitride (tentative)”
Tomoki Machida (Institute of Industrial Science, University of Tokyo) “Carrier transport in van der Waals junctions of h-BN and two-dimensional materials”
Hisanori Aikawa (Kioxia Korea Corporation, Seoul, Korea) “First demonstration of full integration and characterization of 4F2 1S1M cells with 45 nm of pitch and 20 nm of MTJ size”
Tsunenobu Kimoto (Kyoto University) “Physics and Performance Improvement of SiC MOSFETs”
Hiroshi Funakubo (Tokyo Institute of Technology) “Stabilization and identification of ferroelectric HfO2 thin films”
Toshiki ITO (Canon Inc.) “Development of Nanoimprint Lithography Tool”
Jin-Seong Park (Hanyang University) “Atomic Layer Deposited Oxide Semiconductor as a New Channel Material for BEOL FET Application: Potential & Prospect”
Sanghun Jeon (Korea Advanced Institute of Science and Technology) TBA

IMPORTANT DATES:

Abstract deadline: August 10, 2023
Deadline for Early Registration: September 23, 2023
Workshop: October 23-25, 2023
Full paper (JJAP) deadline: November 30, 2023

SUBMISSION OF PAPERS:

Paper acceptance is based on the submitted abstracts. The work must be original and unpublished. The authors are encouraged to submit a 2-page maximum camera-ready abstract written in English in A4-size by Aug 10, 2023, to the workshop website at http://iwdtf.org
The extended abstract should clearly and concisely state the originality and specific results of the work. The detailed information about the format will be provided at the workshop website. Papers to be presented at the workshop will be selected by the program committee on the basis of the content of submitted abstracts.

SUBMISSION OF FULL-PAPERS TO THE SPECIAL ISSUE OF JJAP:

Authors of papers accepted in IWDTF2023 are encouraged to submit the original and significant part of the papers to the Special Issue of the Japanese Journal of Applied Physics (JJAP). The deadline of the paper submission is Nov. 30, 2023. Please refer to the IWDTF2023 website for the detailed information. Those who wish to submit a paper to the special issue should follow the instructions for preparation of manuscript for JJAP. Please note that the manuscript will be published after the usual review process in JJAP.

REGISTRATION:

Registration for the IWDTF2023 should be made on the workshop website.

COMMITTEE:

Organizing Committee

Chairperson: Eisuke Tokumitsu (Japan Advanced Institute of Science and Technology)
Members: Hiroshi Nohira (Tokyo City University), Tetsuro Endo (Tohoku University), Kazuyuki Hirose (Japan Aerospace Exploration Agency), Chihoko Kaneda (Tohoku University), Seiichi Miyazaki (Nagoya University), Akira Nishiyama (KIOXIA), Kenji Shiraishi (Nagoya University), Hiroyuki Kageshima (Shimane University), Yukinori Morita (National Institute of Advanced Industrial Science and Technology), Shin’ichi Takagi (The University of Tokyo), Heiji Watanabe (Osaka University)

Steering Committee

Chairperson: Shinji Migita (National Institute of Advanced Industrial Science and Technology)
Vice Chairperson: Akinobu Teramoto (Hiroshima University)
Secretary: Takeshi Kawae (Kanazawa University)
Treasurer: Dai Okamoto (Toyama Prefectural University)
Members: Kuniyuki Kakushima (Tokyo Institute of Technology)

Program Committee

Chairperson: Shun-ichiro Ohmi (Tokyo Institute of Technology)
Vice Chairperson: Yuichiro Mitani (Tokyo City University), Kenji Okada (Rapidus)
Chief Editor of JJAP Special Issue: Keisuke Yamamoto (Kyushu University), Akio Ohta (Fukuoka University)
Secretary: Tomoyuki Suwa (Tohoku University), Takaaki Miyasako (Murata Manufacturing)
Members: Kojii Kita (The University of Tokyo), Toru Akiyama (Mie University), Reika Ichihara (KIOXIA), Jun Okuno   (Sony Semiconductor Solutions), Tomiya Ono (Kobe University), Hiroshi Ashihara (KOKUSAI Electric), Hisashi Shima  (National Institute of Advanced Industrial Science and Technology), Takanobu Watanabe (Waseda University), Masao Inoue (Renesas Electronics), Noriyuki Taoka (Nagoya University), Mitsuru Sometani (National Institute of Advanced Industrial Science and Technology), Motoyuki Sato (Tokyo Electron), K. S. Chang-Liao (National Tsing Hua University), Shengkai Wang (Institute of Microelectronics of the Chinses Academy of Sciences), Changhwan Choi (Hanyang University), Yao-Jen Lee (Yangming Jiaotong University), S.M. Yoon (Kyung Hee University)

FURTHER INOFORMATION:

Please visit our workshop website: http://iwdtf.org

INQUIRY:

IWDTF 2023 Secretariat
E-mail:

2021 International Workshop on
DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES
─  Science and Technology  ─

November 14 – 16, 2021, On-line virtual

Sponsored by The Japan Society of Applied Physics
Co-sponsored by JSAP Thin Film and Surface Physics Division
Endorsed by JSAP Silicon Technology Division / IEEE EDS Japan Chapter

日 時：2021年11月14日(日) − 16日(火)  

場 所：オンライン開催

URL： http://iwdtf.org

SCOPE:

The 2021 International Workshop on “Dielectric Thin Films for Future Electron Devices: Science and Technology” (IWDTF2021) will be held on-line, on November 14-16, 2021. The IWDTF started in 1999, based on a domestic annual workshop on ultrathin silicon dioxide films. The IWDTF2021 is the tenth workshop, which will focus on the science and technologies of dielectric films for electron devices, such as ultrathin dielectrics, high-k dielectrics, and ferroelectrics. In addition to the papers on materials and processes of dielectrics for conventional logic devices, the papers for various electron devices including the memory, the power, the analog, the sensor, and the display devices are welcomed. The IWDTF will provide a great opportunity for information exchange and discussions at forefront of the researches on future electron devices. The papers on both experimental and theoretical studies, for the deep understanding of the properties of dielectric films and their interfaces, are welcomed. The workshop will consist of invited and contributed talks. Selected topics of current interests will be reviewed by several invited talks.

Papers are solicited in, but not limited to, the following area:
⚫ Electron device application of dielectric thin films
⚫ Material design of dielectric thin films
⚫ Growth and related process of dielectric thin films
⚫ Characterization and control of dielectrics, dielectrics surfaces, and dielectrics interfaces
⚫ Electrical characterization of dielectrics, dielectrics surfaces, and dielectrics interfaces
⚫ Surface preparation and cleaning issues for dielectrics
⚫ Dielectric wear-out and reliability
⚫ Dielectric reliability related to process integration
⚫ Surface passivation technology
⚫ Theoretical approaches to dielectrics, dielectrics surfaces, and dielectrics interfaces

KEYNOTE SPEAKER:

Ken Takeuchi (Univ of Tokyo) “Co-design of non-volatile memory devices, circuits and systems in AI era”
Ming Liu (IMECAS)“Oxide based resistive switching device for memory and computing applications”

INVITED SPEAKERS: 

Byun Jin Cho (KAIST)“Anti-ferroelectric HZO blocking layer in charge trap flash memory device”
Steven George (Univ of Colorado)“Thermal atomic layer etching of dielectric films and pathways for selectivity”
Masahiro Hori (Shizuoka Univ)“Charge pumping under spin resonance conditions in silicon MOSFETs”
Masaru Izawa (Hitachi High-Tech)“High selective thermal-cyclic ALE for conformal etch and recess of thin films”
Jiyoung Kim (Univ of Texas at Dallas)“Effects of oxidation reactants of thermal ALD for ferroelectric HZO films”
Takao Marukame (Toshiba)“Metal-oxide synapse devices and their application to neuromorphic analog neuron circuits”
Terence Mittmann (NaMLab gGmbH)“Ferroelectric phase stabilization influences HfO2-based device performance”
Norio Tokuda (Kanazawa Univ)“Advances in diamond MOS interface”
Kasidit Toprasertpong (Univ of Tokyo)“HfZrO2-based ferroelectric FETs for emerging computing technologies”
Lin-Wang Wang (Berkeley National Lab)“Ultrathin dielectric integration and reliability on 2D semiconductors”
Xinran Wang (Nanjing Univ)“Atomistic plane wave pseudopotential simulations for MOSFET devices”

IMPORTANT DATES:

Abstract deadline: August 20, 2021
Notification of acceptance: By September 30, 2021 
Workshop: November 14-16, 2021
Full paper (JJAP) deadline: December 18, 2021 (tentative)

SUBMISSION OF PAPERS:

Paper acceptance is based on the submitted abstracts. The work must be original and unpublished. The prospective authors are requested to submit abstract in PDF format of two pages in length, including all figures and tables, by Aug 20, 2021 to the workshop website at http://iwdtf.org
The two-page abstracts must be written in English and typed in an area of 8.5×11 inches or A4 size. The first page must be headed by the title of the paper, author(s), affiliation(s), address, phone number, and e-mail address of the corresponding author. The abstract must clearly and concisely state the specific results of the work and its originality. The detailed information about the format will be provided at the workshop website. Papers to be presented at the workshop will be selected by the program committee on the basis of the content of submitted abstracts. The decision will be notified by e-mail until the middle of September. In the 2021 conference, all contributors will be requested to give an oral presentation conforming to 20 min format. Only when we have more contributing papers than expected some papers may be presented in poster format (on-line).

SUBMISSION OF FULL-PAPERS TO THE SPECIAL ISSUE OF JJAP:

Authors of papers accepted in IWDTF2021 are encouraged to submit the original and significant part of the papers to the Special Issue of the Japanese Journal of Applied Physics (JJAP). The deadline of the paper submission is Dec 18, 2021 (temporary). Please refer to the IWDTF2021 website for the detailed information. Those who wish to submit a paper to the special issue should follow the instructions for preparation of manuscript for JJAP. Please note that the manuscript will be published after the usual review process in JJAP.

REGISTRATION:

Registration for the IWDTF2021 should be made on the workshop website.

COMMITTEE:

Organizing Committee

Chairperson: Y. Morita (AIST)
Members: T. Chikyo (NIMS), T. Endoh (Tohoku Univ.), K. Hirose (JAXA), H. Kageshima (Shimane Univ.), C.Kaneta (Tohoku Univ.), S. Miyazaki (Nagoya Univ.), A. Nishiyama (KIOXIA), H. Nohira (Tokyo City Univ.), K. Shiraishi (Nagoya Univ.)

Steering Committee

Chairperson: K. Kakushima (Tokyo Inst. of Tech.)
Vice Chairperson: T. Kawanago (Tokyo Inst. of Tech.)
Members: R. Yokogawa (Meiji Univ.), D. Okamoto (Toyama Pref. Univ.)

Program Committee

Chairperson: K. Kita (Univ. of Tokyo)
Vice Chairperson: M. Inoue (Renesas Elec.), N. Taoka (Nagoya Univ.)
Members: A. Ohta (Nagoya Univ.), S. Ohmi (Tokyo Inst. of Tech.), M. Sometani (AIST), Y. Akasaka (TokyoElectron), T. Akiyama (Mie Univ.), H. Ashihara (KOKUSAI Electric), K. Eriguchi (Kyoto Univ), R. Ichihara (KIOXIA), Y. Mitani (Tokyo City Univ.), Y. Mori (Hitachi), T. Nabatame (NIMS), O. Nakatsuka (Nagoya Univ.), J. Okuno (Sony Semicond. Solutions), T. Ono (Kobe Univ.), K. Sawano (Tokyo City Univ.), H. Shima (AIST), T. Shimizu (NIMS), S. Takagi (Univ. of Tokyo), A. Teramoto (Hiroshima Univ.), E. Tokumitsu (JAIST), H. Watanabe (Osaka Univ.), T. Watanabe (Waseda Univ.), B. H. Lee (POSTECH), K.-S. Chang-Liao (National Tsing Hua Univ.), S. Wang (IMECAS), C. Choi (Hanyang Univ.)

FURTHER INOFORMATION:

Please visit our workshop website: http://iwdtf.org

INQUIRY:

IWDTF 2021 Secretariat
E-mail: iwdtf-group@g.ecc.u-tokyo.ac.jp

2019 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES（次世代電子デバイスのための誘電体薄膜－科学と技術－2019）

日時

2019年11月18日（月）～20日（水）

場所

東京工業大学 大岡山キャンパス

ホームページ

http://iwdtf.org/

参加申し込み方法

会議ホームページの参加申込フォームからお申込み下さい↓
参加登録ページへのリンク

SCOPE

· Electron device application of dielectric thin films
· Material design of dielectric thin films
· Growth and related process of dielectric thin films
· Characterization and control of dielectrics, dielectrics surfaces, and dielectrics interfaces
· Electrical characterization of dielectrics, dielectrics surfaces, and dielectrics interfaces
· Surface preparation and cleaning issues for dielectrics
· Dielectric wearout and reliability
· Dielectric reliability related to process integration
· Surface passivation technology
· Theoretical approaches to dielectrics, dielectrics surfaces, and dielectrics interfaces

KEYNOTE SPEAKER

Ernest Wu (IBM): “Facts and Myths of Dielectric Breakdown Processes”
Shinichi Takagi (Univ. Tokyo): “Importance of semiconductor MOS interface control on advanced electron devices”

INVITED SPEAKER

Yi Zhao (Zhejiang Univ.): “Ge-based Non-Volatile Memories”
Tuo-Hung Hou (National Chiao Tung Univ.): “Emerging memory for data-centric computing”
Tadashi Yamaguchi (Renesas Electronics): “Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique”
Kohsuke Nagashio (Univ. Tokyo): “Understanding interface properties in 2D heterostructure FETs”
Hiroshi Yano (Univ. Tsukuba): “SiC MOS interface: what limits the channel mobility? ”
Daigo Kikuta (Toyota Central R&D Labs.):”Improvement of gate oxide reliability and instability in GaN-based MOS devices”

TOPICAL SESSION

“Achievement in Understanding Oxidation Processes of Si, Ge, SiGe, SiC, and GaN – 20 Years Anniversary –”
Yuji Takakuwa (Tohoku Univ.), Takayoshi Shimura (Osaka Univ.), Tomonori Nishimura (Univ. Tokyo), Takuji Hosoi (Osaka Univ.), Yoshihiro Irokawa (NIMS)

問合せ

IWDTF 2019 事務局　〒158-0082 東京都世田谷区等々力8-15-1 東京都市大学総合研究所
Tel：03-5706-3691　　Fax：03-5706-3125　　E-mail: iwdtf2019@ssl.ee.tcu.ac.jp

2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES

November 20-22, 2017

Todaiji Temple Cultural Center, Nara, Japan

Official web site

2015 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES

November 2-4, 2015

Miraikan, National Museum of Emerging Science and Innovation, Tokyo, Japan

Official web site

詳細

2013 IWDTF 2013年11月7日（木）～9日（土）、筑波大学　東京キャンパス

詳細

2011年1月20～21日、東京工業大学

詳細

2008年11月5～7日、東京工業大学

2006年 11月8～10日、川崎市産業振興会館

2004年5月26～28日、National Museum of Emerging Science and Innovation, Tokyo