Oral session

• R. Takabe, University of Tsukuba, Japan
  [17-PM-V-3] Fabrication of B-doped p-BaSi₂ on n-Ge(111) Substrates for Heterojunction Solar Cells
• A.V. Shevlyagin, FEB Russian Academy of Science, Russia
  [18-AM-VI-2] Room-Temperature Luminescent Properties of the Si / β-FeSi₂ Nanocrystals/Si LED

Poster session

• S. Yachi, University of Tsukuba, Japan
  [17-P8] p-BaSi₂/n-Si Solar Cells with Conversion Efficiency Approaching 10% by Reduction of Contact Resistance and Surface Passivation using a-Si Capping Layers
• H. Murata, University of Tsukuba, Japan
  [17-P10] Multi-layer Graphene on Insulator Formed by Co-induced Layer Exchange
• N. Murakoso, Kyushu Institute of Technology, Japan
  [17-P32] Lattice Vibrational Properties of BaSi₂ Epitaxial Film in Polarized Raman Spectra
• S. Konno, Ibaraki University, Japan
  [17-P38] Oxidation Resistance of Impurity Doped Mg₂Si Grown from the Melt