Oral session

  • R. Takabe, University of Tsukuba, Japan
    [17-PM-V-3] Fabrication of B-doped p-BaSi2 on n-Ge(111) Substrates for Heterojunction Solar Cells
  • A.V. Shevlyagin, FEB Russian Academy of Science, Russia
    [18-AM-VI-2] Room-Temperature Luminescent Properties of the Si / β-FeSi2 Nanocrystals/Si LED

Poster session

  • S. Yachi, University of Tsukuba, Japan
    [17-P8] p-BaSi2/n-Si Solar Cells with Conversion Efficiency Approaching 10% by Reduction of Contact Resistance and Surface Passivation using a-Si Capping Layers
  • H. Murata, University of Tsukuba, Japan
    [17-P10] Multi-layer Graphene on Insulator Formed by Co-induced Layer Exchange
  • N. Murakoso, Kyushu Institute of Technology, Japan
    [17-P32] Lattice Vibrational Properties of BaSi2 Epitaxial Film in Polarized Raman Spectra
  • S. Konno, Ibaraki University, Japan
    [17-P38] Oxidation Resistance of Impurity Doped Mg2Si Grown from the Melt