This is a system for the public acknowledgement of young researchers who proactively promoted their superior research results at the lecture hosted by this subcommittee, in order to vitalize the activities of this subcommittee and to cultivate young researchers. It has been implemented since the 2004 lecture.
You will be acknowledged at the closing ceremony of the subcommittee's lectures (certificate of commendation and presentation of a memento), and the names of the prize winners will be listed on this subcommittee's web site.
| 19th (9th Meeting on Advanced Power Semiconductor, December 20-21, 2022, Fukuoka International Convention Center) | ||
|---|---|---|
| Shibata, Shunya (Kyoto Univ.) | IA-4 | Improvement of threshold voltage controllability of vertical gate JFET fabricated by ion implantation into semi-insulating SiC substrate |
| Nakanuma, Takasumi (Osaka Univ.) | IA-7 | Control of luminescent centers at the SiO2/SiC interface by oxidation and heat treatment processes |
| 18th (8th Meeting on Advanced Power Semiconductor, December 9-10, 2021, Online) | ||
|---|---|---|
| Asada, Satoshi (Central Research Institute of Electric Power Industry) | IA-5 | Potential barriers formed in the conduction band of n-type 4H-SiC epilayers by various stacking faults |
| Matsuoka, Taiga (Kyoto Univ.) | IA-4 | Formation of S ion-implanted n-type SiC layer and ionization energy evaluation of S donor |
| 17th (7th Meeting on Advanced Power Semiconductor, December 9-10, 2020, Online) | ||
|---|---|---|
| Kakuda, Hayato (Waseda Univ.) | IA-1 | High current density (20 kA/cm2, 710mA/mm) and low on-resistance (2.5 mΩcm2) of vertical two-dimensional hole gas diamond power MOSFET with trench structure |
| Tsunoda, Jun (Univ. of Tsukuba) | IA-4 | Accurate NBTI evaluation of SiC MOSFET by improved high-speed On-the-fly method |
| 16th (6th Meeting on Advanced Power Semiconductor, December 3-4, 2019, International Conference Center Hiroshima) | ||
|---|---|---|
| Ito, Koji (Kyoto Univ.) | IA-9 | Fabrication of normally-off p- and n-JFET on a SiC common substrate for high-temperature IC operation |
| Nemoto, Hiroki (Univ. of Tsukuba.) | IA-12 | Analysis of conduction mechanism of hole leakage current in thermally grown oxide on p-channel 4H-SiC MOSFETs |
| 15th (5th Meeting on Advanced Power Semiconductor, Novemver 6, 2018, Kyoto Terrsa) | ||
|---|---|---|
| Nakajima, Masashi (Kyoto Univ.) | IA-22 | Fabrication of normally-off p- and n-JFET on a SiC common substrate for high-temperature IC operation |
| Kanegae, Kazutaka (Kyoto Univ.) | IA-9 | Accurate method for estimating hole trap concentration in n-type GaN |
| 14th (4th Meeting on Advanced Power Semiconductor, Novemver 1, 2017, Nagoya Congress Center) | ||
|---|---|---|
| Ichimura, Aiko (DENSO) | IA-27 | 1030 V, 0.94 mΩcm2 SiC Trench MOSFET |
| Kokubo, Nobuhiko (Nagoya Univ.) | IB-17 | Edge Component Analysis of Threading Dislocation in GaN Single Crystal Using Raman Spectroscopy |
| 13th (3rd Meeting on Advanced Power Semiconductor, Novemver 9, 2016, Tsukuba International Congress Center) | ||
|---|---|---|
| Tanaka, Hajime (Kyoto Univ.) | P-51 | Theoretical investigation of Hall scattering factor, hole density and hole mobility in p-type 4H-SiC |
| Mori, Seigo (ROHM Semiconductor) | P-125 | Fabrication and characterization of 3 kV 4H-SiC reverse blocking MOSFET |
| 12th (2nd Meeting on Advanced Power Semiconductor, Novemver 10, 2015, International House, Osaka) | ||
|---|---|---|
| Kobayashi, Takuma (Kyoto Univ.) | P-65 | Cause for the mobility drop in SiC MOSFETs with heavy-doped p-bodies |
| Tajiri, Koki (Osaka Univ.) | P-41 | Thinning of SiC Wafer by sub-atmospheric-pressure plasma etching with SF6 |
| 11th (1st Meeting on Advanced Power Semiconductor, Novemver 19, 2014, Winc Aichi) | ||
|---|---|---|
| Hirai, Hirohisa (The Univ. of Tokyo) | P-47 | Infrared spectroscopic study on oxidation-induced byproduct generated at 4H-SiC/SiO2 interface by low-temperature oxidation with O2 |
| Uchida, Kosuke (Sumitomo Electric Industries) | P-77 | Characterization of V-groove trench SiC MOSFETs with Buried Structures |
| 10th (22nd Conference, December 10, 2013, Saitama Assembly Hall) | ||
|---|---|---|
| Niwa, Hiroki (Kyoto Univ.) | C-25 | Temperature Dependence of Impact Ionization Coefficients in 4H-SiC |
| Oh-oka, Atsushi (Panasonic) | C-37 | Design of Diode-Integrated SiC-MOSFET (DioMOS) and Improvement in Device Performance |
| 9th (21st Conference, November 20, 2012, Osaka City Central Hall) | ||
|---|---|---|
| Kaji, Naoki (Kyoto Univ.) | II-3 | Fabrication of Ultrahigh-Voltage SiC PiN Diodes with Low On-Resistance by Lifetime Enhancement Process |
| Daikoku, Hironori (TOYOTA MOTOR) | P-1 | Surface Shape-Controlled Solution Growth of 4H-SiC Bulk Crystal |
| 8th (20th Conference, December 9, 2011, Winc Aichi) | ||
|---|---|---|
| Ikeguchi, Daisuke (Osaka Univ.) | P-75 | Investigation of UV-induced electrical defects in thermally grown SiO2/SiC structures |
| Nakano, Yuuki (ROHM) | P-111 | 690V, 1.00mΩcm2 4H-SiC Double-Trench MOSFETs |
| 7th (19th Conference, October 22, 2010, Epocal Tsukuba) | ||
|---|---|---|
| Kouketsu, Hidenori (NAIST) | P-19 | Disappearance of sub-trench in 4H-SiC by thermal etching using Cl2 gas |
| Miyazawa, Tetsuya (CRIEPI) | P-31 | Carrier Lifetimes of 4H-SiC Epilayers with Carbon Ion Implantation and Annealing Method |
| 6th (18th Conference, December 17, 2009, Kobe International Conference) | ||
|---|---|---|
| Okamoto, Dai (NAIST) | P-67 | Demonstration of high-mobility 4H-SiC MOSFETs by incorporation of P atoms into SiO2/SiC |
| Kawahara, Koutaro (Kyoto Univ.) | P-73 | Detection and Reduction of Deep Levels in 4H-SiC Generated by Device Processes |
| 5th (17th Conference, December 8, 2008, Ota City Industrial Plaza) | ||
|---|---|---|
| Hiyoshi, Tohru (Kyoto Univ.) | P-35 | Reduction of Deep Levels in n-type 4H-SiC by Thermal Oxidation |
| Watanabe, Yu (Osaka Univ.) | P-91 | Passivation of SiO2/SiC interface defect by the combination treatment with nitrogen plasma irradiation and forming gas anneal |
| 4th (16th Conference, November 3, 2007, Aichi Prefectural Women's Center) | ||
|---|---|---|
| Itoh, Masahiko (CRIEPI) | P-1 | Development of high rate 4H-SiC epitaxial growth technique achieving large-area uniformity |
| Suzuki, Takuma (Toshiba) | P-71 | Realization of High Reliability and High Channel Mobility Metal-oxide-semiconductor Field-effect Transistors Fabricated on 4H-SiC(000-1) |
| 3rd (15th Conference, November 9, 2006, Takasaki City Gallery) | ||
|---|---|---|
| Danno, Katsunori (Kyoto University) | P-22 | Investigation of deep levels in n-type 4H-SiC and their origin |
| Hino, Shiro (Tokyo Inst. of Tech.) | P-71 | Characterization and Fabrication of High-Mobility 4H-SiC MOSFET with MOCVD-Deposited Al2O3 Gate Insulator |
| 2nd (14th Conference, November 10, 2005, Kyoto University) | ||
|---|---|---|
| Kakubari, Kouichi (Saitama Univ.) | P-25 | Real Time Observation of SiC Oxidation Using In-Situ Ellipsometer |
| Hara, Hideyuki (Osaka Univ.) | P-30 | Catalyst Assisted Chemical Polishing of 4H-SiC(0001) |
| 1st (13th Conference, October 22, 2004, Nagoya Congress Center) | ||
|---|---|---|
| Negoro, Yuuki (Kyoto Univ.) | P-21 | Electrical characteristics of implanted aluminum and boron near tail region in 4H-SiC |
| Kosugi, Ryoji (AIST) | P-78 | High Temperature Rapid Thermal Oxidation and Nitridation of (0001) 4H-SiC |
