[Purpose of the workshop]
Since 2023, AI has been widely adopted as a practical tool, driving an explosive demand for high-performance, large-scale GPUs and memory. The foundation of AI's advancement lies in the remarkable evolution of CMOS VLSI technology, which, in turn, is built upon the continuous progress of MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) technology. The concept of the Field-Effect Transistor (FET) dates back to 1925, when J. Lilienfeld first invented the MESFET (Metal-Semiconductor FET) using a Schottky gate. The insulated-gate MOSFET was conceived in 1928, but at the time, the available technology and understanding were insufficient to control current flow along the semiconductor surface. As a result, it took 35 years before a functional transistor-like operation was achieved. The first operation of MOSFET using bulk silicon was presented at a conference in 1960, but with the Bipolar Junction Transistor (BJT) at its peak, expectations for the FET remained low. It took another decade to resolve reliability challenges, allowing FETs to gain market acceptance as LSI (Large-Scale Integration) technology in the early 1970s. Since then, MOSFET LSI has continuously pushed past limitations, undergoing relentless miniaturization—from 10 μm technology in 1970 to an astonishing 2 nm today. This progress has been instrumental in enabling AI and has driven transformative technological shifts across multiple eras, including calculators, personal computers, digital cameras, smartphones, and artificial intelligence. Additionally, the horizontal expansion of FET technology into power devices and image sensors has significantly impacted society. In 2025, we celebrate the 100th anniversary of the FET’s invention. To honor this milestone, we plan to hold a workshop that will reflect on the history of FET development, assess its current state, and explore its future trajectory. We also aim to document its present applications and societal impact, creating an archive that will serve as a reference for the next major milestone in semiconductor innovation.